2SK3338-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR - 2 EAV - 1 PD Tch Tstg Rating 500 ±20 ±80 ±30 20 775 340 +150 -55 to +150 Unit V A A V A m J W °C < - 2 Tch=150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=3.56m H, Vcc=50V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=500V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS =0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 Ω Vcc=250V ID=20A VGS=10V L=3.56 m H Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C Min. 500 2.5 Tch=25°C Tch=125°C Typ. Max. Units V V µA m A n A Ω S p F 3.0 3.5 10 500 0.2 1.0 10 100 0.21 0.27 18 3350 5025 480 720 200 300 27 40 100 150 250 375 100 150 155 235 38 60 50 75 1.1 600 11.0 1.65 ns n C A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.368...