2SK3340-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR - 2 EAV - 1 PD Tch Tstg Rating 400 ±23 ±92 ±30 23 545 295 +150 -55 to +150 Unit V A A V A m J W °C < - 2 Tch=150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=1.89m H, Vcc=40V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=400V VGS=0V VGS=±30V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS=25V VDS =25V VGS =0V f=1MHz VCC=300V ID=23A VGS=10V RGS=10 Ω Vcc=200V ID=23A VGS=10V L=1.89m H Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C Min. 400 2.5 Tch=25°C Tch=125°C Typ. Max. Units V V µA m A n A Ω S p F 3.0 3.5 10 500 0.2 1.0 10 100 0.16 0.2 8.5 17 2650 3975 500 750 230 345 22 35 105 160 225 340 120 180 137 210 36 55 48 75 23 1.15 1.73 450 8.6 ns n C A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max....