2SK3341-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR - 2 EAV - 1 PD Tch Tstg Rating 900 ±10 ±40 ±30 10 648 310 +150 -55 to +150 Unit V A A V A m J W °C < - 2 Tch=150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=11.9m H, Vcc=90V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=900V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS =0V f=1MHz VCC=600V ID=10A VGS=10V RGS=10 Ω Vcc=450V ID=10A VGS=10V L=11.9m H Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 900 2.5 Tch=25°C Tch=125°C Typ. Max. Units V V µA m A n A Ω S p F 3.0 3.5 10 500 0.2 1.0 10 100 0.92 1.2 3.5 7 2200 3300 240 360 115 173 28 42 70 105 220 330 90 135 120 180 36 54 40 60 10 1.00 1.50 1.8 21.0 ns n C A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.403...