2SK3474-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR - 2 m J Maximum Avalanche Energy EAS - 1 k V/µs Maximum Drain-Source d V/dt d V DS /dt k V/µs Peak Diode Recovery d V/dt d V/dt - 3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C < - 1 L=0.228m H, Vcc=48V, See to Avalanche Energy Graph - 2 Tch =150°C - 3 - 4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Item Drain-source voltage Symbol V DS VDSX ID Ratings 150 120 ±33 ±4.1 - 4 ±132 ±30 33 169 20 5 2.4 - 4 150 +150 -55 to +150 Remarks VGS=30V Ta=25°C Equivalent circuit schematic (4) Drain(D) (1) Gate(G) VDS < =150V Ta=25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Electrical characteristics at Tc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS =150V VDS =120V VGS=±30V ID=11.5A VGS=0V VGS=0V VDS=0V VGS=10V 8 Tch=25°C Tch=125°C 10 54 16 1500 200 17 13 15 34 15 34 9 12.5 1.10 0.13 0.6 Min. 150 3.0 Typ. Max. 5.0 25 250 100 70 1730 300 26 20 23 51 23 51 13.5 19...