• Part: 2SK3513-01L
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 288.89 KB
Download 2SK3513-01L Datasheet PDF
Fuji Electric
2SK3513-01L
2SK3513-01L is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±12 ±48 ±30 12 183 20 5 1.67 195 +150 Operating and storage -55 to +150 temperature range - 1 L=2.33m H, Vcc=60V, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 600V Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Unit V A A V A m J k V/µs k V/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Test Conditions VGS=0V ID=1m A ID= 250µA VDS=VGS Tch=25°C VDS=600V VGS=0V Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Ω V CC=250V ID=10A VGS=10V L=2.33m H Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.75 Units V V µA n A Ω S p F 10 0.58 8 1200 1800 140 210 6 9 17 26 15 23 35 53 7 11 30 45 11 16.5 10 15...