• Part: 2SK3516-01S
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 143.59 KB
Download 2SK3516-01S Datasheet PDF
Fuji Electric
2SK3516-01S
2SK3516-01S is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
- Part of the 2SK3516-01L comparator family.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR - 2 8 m J EAS - 1 193 k V/µs d VDS/dt - 4 20 d V/dt - 3 5 k V/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C - 1 L=5.53m H, Vcc=45V - 2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C - 3 IF< - 4 VDS < = 450V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 Ω VCC =225V ID=8A VGS=10V L=5.53m H Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 450 3.0 Typ. Max. 5.0 25 250 100 0.65 Units V V µA n A Ω S p F 10 0.50 8 800 1200 120 150 4.5 7 15 23 12 18 25 38 7 11 22 33 9.5 14.5 6.5 10 1.00 0.7 3.5 ns n C 8...