2SK3535-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR - 2 EAS - 1 d V DS /dt d V/dt - 3 PD Tch Tstg Ratings 250 220 ±37 ±3.4 - 4 ±148 ±30 37 251.9 20 5 2.4 - 4 270 +150 -55 to +150 Unit V V A A A V A m J k V/µs k V/µs W W °C °C < - 2 Tch =150°C - 3 Remarks VGS=30V Ta=25°C Equivalent circuit schematic (4) Drain(D) (1) Gate(G) VDS < =250V Ta=25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF < - 1 L=0.309m H, Vcc=48V, See to Avalanche Energy Graph = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < - 4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Electrical characteristics at Tc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS =250V VDS =200V VGS=±30V ID=12.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25°C Tch=125°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 1.10 0.45 1.5 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24...