2SK3550-01R Datasheet | Fuji Electric

.. Fuji Power MOSFET Super FAP-G series Target Specification 2SK3550-01R (900V/1.4Ω/10A) TO-3PF PRELIMINARY 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode recovery d V/dt Maximum Power Dissipation Operating and Storage Temperature range This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 2) Absolute Maximum Ratings (Tc=25- Ž - @ VDS ID ID(pulse) VGS IAR EAS d VDS/dt d V/dt PD- @- - ‚s c=25- Ž PD @Ta=25- Ž Tch Tstg unless otherwise specified) Ratings 900 ±10 ±40 ±30 10 330 20 5 130 3.13 150 -55 - ` +150 Units V A A V A - 1 k V/us k V/us - 2 W W m J Symbols 3)Electrical Characteristics (Tch=25- Ž unless otherwise specified) min. 900 3.0 --------------------10 --typ. ------------1350 150 7.5 37 12 10 --1.0 max. --5.0 25 250 100 1.4 ƒ¶ p F --------------1.5 Units V V ƒÊ A ƒÊ A n A Items Symbols Test Conditions ID=250u A VGS=0V Drain-Source Breakdown Voltage BVDSS VGS(th) ID=250u A VDS=VGS Gate Threshold Voltage Tch=25 VDS=900V Zero Gate Voltage Drain Current IDSS Tch=125 VGS=0V I V =±30V V Gate-Source Leakage Current GSS GS DS=0V Drain-Source On-State Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge Avalanche Capability Diode Forward On-Voltage Ciss Coss Crss Qg Qgs Qgd IAV VSD ID=5A VDS=25V VGS=0V f=1MHz Vcc=450V ID=10A VGS=10V L=6.06m H Tch=25 IF=10A,VGS=0V,Tch=25- Ž VGS=10V n C A V 4) Thermal Characteristics a:Absolute max rating:PD was revised. Items Channel to Case Channel to Ambient Symbols Rth(ch-c) Rth(ch-a) Test Conditions min....