• Part: 2SK3556-01S
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 158.53 KB
Download 2SK3556-01S Datasheet PDF
Fuji Electric
2SK3556-01S
2SK3556-01S is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
- Part of the 2SK3556-01L comparator family.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX - 5 ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 250 220 ±25 ±100 ±30 25 372 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A m J k V/µs k V/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) < < DSS, Tch=150°C < - 1 L=0.67m H, Vcc=48V - 2 Tch=150°C - 3 IF< =-ID, -di/dt=50A/µs, Vcc=BV - 4 VDS< 250V - 5 V GS =-30V - 6 t=60sec f=60Hz = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VDS=200V VGS=±30V ID=12.5A ID=12.5A VDS =75V VGS=0V f=1MHz VGS=0V VGS=0V VDS=0V VGS=10V VDS=25V 8 Tch=25°C Tch=125°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 25 1.10 0.45 1.5 1.65 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 Units V V µA n A mΩ S p F VCC=72V ID=12.5A VGS=10V RGS=10 Ω V CC =72V ID=12A VGS=10V L=100µH Tch=25°C IF=25A VGS=0V...