• Part: 2SK3580-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 131.51 KB
Download 2SK3580-01MR Datasheet PDF
Fuji Electric
2SK3580-01MR
2SK3580-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 300 270 ±12 ±48 ±30 12 193 20 5 2.16 35 +150 -55 to +150 2 Unit V V A A V A m J k V/µs k V/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C - 6 k Vrms < < DSS, Tch=150°C < - 1 L=2.32m H, Vcc=48V - 2 Tch=150°C - 3 IF< =-ID, -di/dt=50A/µs, Vcc=BV - 4 VDS < 300V - 5 V GS =-30V - 6 t=60sec f=60Hz = Electrical characteristics (Tc =25°C unless otherwise specified) .. Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=300V VGS=0V Tch=125°C VDS=240V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=150V ID=6A VGS=10V RGS=10 Ω VCC =150V ID=12A VGS=10V L=100µH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Min. 300 3.5 Typ. Max. 4.5 25 250 100 0.28 Units V V µA n A Ω S p F 10 1.22 10.5 980 1470 170 255...