2SK3587-01MR
2SK3587-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 m J Maximum Avalanche Energy 319.2 k V/µs Maximum Drain-Source d V/dt 20 k V/µs Peak Diode Recovery d V/dt 5 Max. power dissipation 2.16 W Gate(G) 95 Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Isolation Voltage VISO
- 6 2 k Vrms
- 1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF< = BVDSS, Tch < = 150°C
- 4 VDS < = -ID, -di/dt=50A/µs, Vcc < =100V
- 5 VGS=-30V
- 6 t=60sec, f=60Hz Item Drain-source voltage Symbol V DS VDSX
- 5 ID ID(puls] VGS IAS
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C circuit schematic
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=100V VGS=0V Tch=125°C VDS=80V VGS=0V VGS=±30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V RGS=10 Ω V CC =50V ID=50A VGS=10V L=71.9µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs...