2SK3605-01
2SK3605-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS VDSX
- 5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Tc=25°C Ta=25°C Ratings 150 120 ±23 ±3.1
- - ±92 ±30 23 130.9 20 5 105 2.4
- - +150 Unit V V A A A V A m J k V/µs k V/µs W Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source S2 : Source
Operating and storage Tch °C temperature range Tstg -55 to +150 °C
- - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
- 1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF< = BVDSS, Tch < = 150°C
- 4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 150V
- 5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V RGS=10 Ω V CC =75V ID=16A VGS=10V L=363µH Tch=25°C...