• Part: 2SK3609-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 129.02 KB
Download 2SK3609-01 Datasheet PDF
Fuji Electric
2SK3609-01
2SK3609-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX - 5 ID Tc=25°C Ta=25°C Ratings Unit V 200 V 170 A Continuous drain current ±18 A ±2.7 - - A Pulsed drain current ID(puls] ±72 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS - 2 18 m J Maximum Avalanche Energy EAS - 1 125.5 k V/µs Maximum Drain-Source d V/dt d VDS/dt - 4 20 k V/µs Peak Diode Recovery d V/dt d V/dt - 3 5 Max. power dissipation PD Tc=25°C 105 W Ta=25°C 2.4 - - Operating and storage Tch +150 °C temperature range Tstg °C -55 to +150 - - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) - 1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF < = BVDSS, Tch < = 150°C - 4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 200V - 5 VGS=-30V Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=6.5A VGS=10V RGS=10 Ω V CC =100V ID=13A VGS=10V L=620µH Tch=25°C IF=13A VGS=0V Tch=25°C IF=13A VGS=0V...