2SK3612-01L Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX - 5 ID ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 250 220 ±14 ±56 ±30 14 129.1 20 5 2.02 105 +150 -55 to +150 Unit V V A A V A m J k V/μ s k V/μ s W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=1.11m H, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS < = 250V = -ID, -di/dt=50A/μs, Vcc < Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr - 2 Tch < =150°C - 5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V RGS=10 Ω VCC =125V ID=10A VGS=10V L=1.11m H Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/μs Tch=25°C Tch=25°C Tch=125°C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 1.10...