2SK3613-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings Drawings (mm) (mm) O Š }- @- ¡`Œ OUT VIEW Fig.1 o ‚Q Ž}‹- î- Æ- MARKING - Ž ¦ “ à - e - Æ Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹- Žî- DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j- ’ P ‚ .- i Q jÍŽ- ‚@ - ¡à- “ l- l’B é- ‚- Æ Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 250 V 220 V Continuous drain current ±14 A ±2.2 - - A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS - 2 14 A Maximum Avalanche Energy EAS - 1 129.1 m J Maximum Drain-Source d V/dt d VDS/dt - 4 20 k V/µs Peak Diode Recovery d V/dt d V/dt - 3 5 k V/µs Max. power dissipation PD Tc=25°C 105 W Ta=25°C 2.4 - - +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C - - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) - 1 L=1.11m H, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF < = BVDSS, Tch < = 150°C - 4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 250V - 5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX - 5 ID Tc=25°C Ta=25°C “à- e - Ž¦ - ¤W Special specification for customer CONNECTION 11 G G :: Gate Gate Œ‹- ü} “ÁŽê- i‹L- † Lot...