• Part: 2SK3687-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 140.64 KB
Download 2SK3687-01MR Datasheet PDF
Fuji Electric
2SK3687-01MR
2SK3687-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source d V/dt Peak diode recovery d V/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol Ratings V DS 600 VDSX 600 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS d V DS/dt d V/dt PD Tch Tstg VISO 242.7 20 5 2.16 97 +150 -55 to +150 2 Unit V V A A V A m J k V/s k V/µs W Remarks VGS=-30V Tch< =150°C L=1.74m H VCC =60V - 1 VDS< =600V - 2 Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) °C °C k Vrms t=60sec, f=60Hz Gate(G) Source(S) - 1 See to Avalanche Energy Graph - 2 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V Tch=25°C VDS=480V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω V CC=300V ID=16A VGS=10V L=1.74m H Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to...