2SK3688-01SJ Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 600 Continuous drain current ±16 Pulsed drain current ±64 Gate-source voltage ±30 Repetitive or non-repetitive 16 Maximum avalanche energy 242.7 Maximum drain-source d V/dt 20 Peak diode recovery d V/dt 5 1.67 Max. power dissipation 270 Operating and storage Tch +150 temperature range Tstg -55 to +150 Isolation voltage VISO 2 - 1 L=1.74m H, Vcc=60V, See to Avalanche Energy Graph - 2 IF< = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/μs, Vcc < Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS d V DS /dt d V/dt PD Unit V V A A V A m J k V/μ s k V/μ s W Remarks VGS=-30V Equivalent circuit schematic Tch < =150°C - 1 VDS < = 600V - 2 Ta=25°C Tc=25°C Gate(G) Source(S) Drain(D) °C °C k Vrms t=60sec, f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.74m H Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/μs Tch=25°C...