2SK3693-01MR Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit 450 V DS V VDSX - 5 450 V Equivalent Continuous drain current ID ±17 A Pulsed drain current ID(puls] ±68 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR - 2 17 A Maximum Avalanche Energy EAS - 1 221.9 m J Maximum Drain-Source d V/dt d VDS/dt - 4 20 k V/µs Peak Diode Recovery d V/dt d V/dt - 3 5 k V/µs Gate(G) Max. power dissipation PD Ta=25°C 2.16 W Tc=25°C 80 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage Viso - 6 2000 V - 1 L=1.41m H, Vcc=45V, Tch=25°C See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS< = -ID, -di/dt=50A/µs, Vcc < = 450V - 5 VGS=-30V - 6 f=6-Hz, t=60sec. Item Drain-source voltage circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=450V VGS=0V Tch=25°C Tch=125°C VDS=360V VGS=0V VGS=±30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 Ω V CC=225V ID=17A VGS=10V L=1.41m H Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V...