2SK3789-01R
2SK3789-01R is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR d V DS /dt d V/dt PD Tch Tstg Ratings 150 150 92 ±368 ±30 92 1205.7 41 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A m J m J Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note
- 1 Note
- 2 Note
- 3
Source(S) Note
- 1:Tch < = 150°C,Repetitive and Non-repetitive Note
- 2:Starting Tch=25°C,IAS=37A,L=1.29m H, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note
- 3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph Note
- 4:IF< = -ID, -di/dt=50A/µs,VCC< = BVDSS,Tch< = 150°C k V/µs VDS= < 150V k V/µs Note
- 4 Tc=25°C W Ta=25°C °C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a)
Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =150V VGS=0V...