• Part: 2SK3916-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 200.32 KB
Download 2SK3916-01 Datasheet PDF
Fuji Electric
2SK3916-01
2SK3916-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220AB Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive VDS VDSX ID ID(puls] VGS IAR 450 450 4.3 ±17.2 ±30 V V VGS=-30V A A V A Note - 1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source d V/dt Peak diode recovery d V/dt Maximum power dissipation Operating and storage EAS d VDS/dt d V/dt PD Tch 6 20 5 2.02 60 +150 m J Note - 2 m J Note - 3 k V/μs VDS <=450V k V/μs Note - 4 W Ta=25°C W Tc=25°C °C temperature range Tstg -55 to +150 °C Note - 1 Tch<=150°C Note - 2 Starting Tch=25°C, IAS=1.8A, L=119m H, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note - 3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note - 4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch...