• Part: 2SK3917-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 116.28 KB
Download 2SK3917-01MR Datasheet PDF
Fuji Electric
2SK3917-01MR
2SK3917-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220F Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Symbol VDS VDSX ID ID(puls] VGS IAR Ratings 450 450 4.3 ±17.2 ±30 4.3 Unit V V A A V A Remarks VGS=-30V Note - 1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source d V/dt Peak diode recovery d V/dt Max. power dissipation EAS d VDS/dt d V/dt Operating and storage temperature range Isolation voltage Tch Tstg VISO - 6 211 m J Note - 2 2.1 20 5 2.16 21 +150 -55 to +150 2 m J Note - 3 k V/µs VDS <= 450V k V/µs Note - 4 W Ta=25°C W Tc=25°C °C °C k Vrms t=60sec, f=60Hz Note - 1 Tch=150°C Note - 2 Starting Tch=25°C, IAS=1.8A, L=119m H, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note - 3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note - 4 IF=< -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch...