2SK3917-01MR
2SK3917-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive
Symbol VDS VDSX ID ID(puls] VGS IAR
Ratings 450 450 4.3 ±17.2 ±30 4.3
Unit V V A A V A
Remarks VGS=-30V
Note
- 1
Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source d V/dt
Peak diode recovery d V/dt
Max. power dissipation
EAS d VDS/dt d V/dt
Operating and storage temperature range Isolation voltage
Tch Tstg VISO
- 6
211 m J Note
- 2
2.1 20 5 2.16 21 +150 -55 to +150 2 m J Note
- 3 k V/µs VDS <= 450V k V/µs Note
- 4
W Ta=25°C W Tc=25°C °C
°C k Vrms t=60sec, f=60Hz
Note
- 1 Tch=150°C Note
- 2 Starting Tch=25°C, IAS=1.8A, L=119m H, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note
- 3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note
- 4 IF=< -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch...