• Part: 7MBR10SA120
  • Description: IGBT
  • Manufacturer: Fuji Electric
  • Size: 619.25 KB
Download 7MBR10SA120 Datasheet PDF
Fuji Electric
7MBR10SA120
7MBR10SA120 is IGBT manufactured by Fuji Electric.
Features - Low VCE(sat) - pact package - P.C. board mount - Converter diode bridge, Dynamic brake circuit Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 ±20 15 10 30 20 10 75 1200 ±20 15 10 30 20 75 1200 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 - 1 Unit V V A A A W V V A A W V V A A A 2s °C °C V N- m Continuous Tc=25°C Tc=80°C Tc=25°C Tc=80°C Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base - 2 voltage between thermistor and others - 3 Mounting screw torque AC : 1 minute - 1 Remendable value : 2.5 to 3.5 N- m (M5) - 2 All terminals should be connected together when isolation test will be done. - 3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT Modules Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=10m A VGE=15V, Ic=10A chip...