7MBR50SB-120 Datasheet | Fuji Electric

Features - NPT-Technology - Solderable Package - Square SC SOA at 10 x IC - High Short Circuit Withstand-Capability - Small Temperature Dependence of the Turn-Off Switching Loss - Low Losses And Soft Switching IGBT PIM 1200V 6x50A+Chopper I Outline Drawing I Equivalent Circuit I Absolute Maximum Ratings ( Tc=25°C) Items Inverter Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) 2 It (Non Repetitive) Collector-Emitter Voltage Gate - Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque- Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM IO IFSM VCES VGES IC IC PULSE PC VRRM Tj TStg VISO Test Conditions Continuous 1ms 1 device 50Hz/60Hz sinus wave Tj=150°C, 10 ms, sinus wave 25°C / 80°C 25°C / 80°C Ratings 1200 ± 20 75 / 50 150 / 100 50 360 1600 50 520 1352 1200 ± 20 35 / 25 70 / 50 180 1200 +150 -40 ∼ +125 2500 3.5 Units V A W V A As V A W V °C V Nm Brake Chopper Rectifier Continuous 1ms 1 device 25°C / 80°C 25°C / 80°C A.C. 1min. Note: - :Remendable Value; 2.5 ∼ 3.5 Nm (M5) 7MBR 50SB-120 I Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage IGBT PIM 1200V 6x50A+Chopper Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr,x tr,i toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr,x toff tf IRRM R B Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=50m A VGE=15V Chip IC = 50A Terminal f=1MHz, VGE=0V, VCE=10V VCC = 600V IC = 50A VGE = ±15V RG = 24Ω Inductive Load IF=50A IF=50A IF=50A Chip Terminal Chip...