ESAC83M-004R
ESAC83M-004R is SCHOTTKY BARRIER DIODE manufactured by Fuji Electric.
Features
Insulated package by fully molding Low VF Super high speed switching High reliability by planer design
1. Gate 2. Drain 3. Source
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=99°C Sine wave 10ms Conditions Rating 40 48 20- 120 -40 to +150 -40 to +150 Unit V V A A °C °C
- Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=8A VR=VRRM Junction to case Max. 0.55 15 2.5 Unit V m A °C/W
(40V / 20A )
Characteristics
Forward characteristics
ESAC83M-004R (20A)
Reverse characteristics
50 30 10
IF [A]
10 5 3
IR [m A] 1
1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.01 0 10 20 30 40 50 60 70
VF [V]
VR [V]
Forward power dissipation
20 7.5 16
Reverse power dissipation
WF [W ]
W R 12 [W ]
2.5 4
0 0 5 10 15
0 0 10 20 30 40 50
Io [A]
VR...