• Part: ESAC83M-004R
  • Description: SCHOTTKY BARRIER DIODE
  • Category: Diode
  • Manufacturer: Fuji Electric
  • Size: 84.78 KB
Download ESAC83M-004R Datasheet PDF
Fuji Electric
ESAC83M-004R
ESAC83M-004R is SCHOTTKY BARRIER DIODE manufactured by Fuji Electric.
Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design 1. Gate 2. Drain 3. Source JEDEC EIAJ Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=99°C Sine wave 10ms Conditions Rating 40 48 20- 120 -40 to +150 -40 to +150 Unit V V A A °C °C - Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=8A VR=VRRM Junction to case Max. 0.55 15 2.5 Unit V m A °C/W (40V / 20A ) Characteristics Forward characteristics ESAC83M-004R (20A) Reverse characteristics 50 30 10 IF [A] 10 5 3 IR [m A] 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 10 20 30 40 50 60 70 VF [V] VR [V] Forward power dissipation 20 7.5 16 Reverse power dissipation WF [W ] W R 12 [W ] 2.5 4 0 0 5 10 15 0 0 10 20 30 40 50 Io [A] VR...