FGW30N120H
FGW30N120H is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply Power coditionner Power factor correction circuit
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Symbols VCES VGES IC@25 IC@100 ICP
- Short Circuit Withstand Time t SC
Maximum Power Dissipation
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 53 30 90 90
260 -40 ~ +175 -55 ~ +175
Units
Remarks
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note
- 1
A VCE≤1200V, Tj≤175°C
μs
VCC≤600V, VGE=12V Tj≤150°C
W TC=25°C
°C
°C
Note
- 1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance Output Capacitance Reverse Transfer...
