FGW30XS65
FGW30XS65 is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbol VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
- Max. Power Dissipation
Ptot
Operating Junction Temperature Tvj
Storage Temperature
Tstg
Value 650 ± 20 ± 30 46 30 120
174 -40 ~ +175 -55 ~ +175
Unit
Remarks
V tp < 1 μs
A TC = 25 °C
A TC = 100 °C
A Note
- 1
VCE ≤ 650 V Tvj ≤ 175 °C
W TC = 25 °C
°C
°C
Note
- 1 : Pulse width limited by Tvj max.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)
Parameter Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol ICES IGES VGE(th)
VCE(sat)...
