• Part: FGW75XS120
  • Description: Discrete IGBT
  • Manufacturer: Fuji Electric
  • Size: 756.08 KB
Download FGW75XS120 Datasheet PDF
Fuji Electric
FGW75XS120
FGW75XS120 is Discrete IGBT manufactured by Fuji Electric.
Features Pb-free lead terminal; Ro HS pliant Halogen-free molding pound Applications Uninterrupted Power Supply, PV Power Conditioner, Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Symbol Collector-Emitter Voltage VCES Gate-Emitter Voltage Transient Gate-Emitter Voltage VGES DC Collector Current IC@25 IC@100 Pulsed Collector Current Max. Power Dissipation Ptot Operating Junction Temperature Tvj Storage Temperature Tstg Value 1200 ± 20 ± 30 117 75 300 649 -40 ~ +175 -55 ~ +175 Unit Remarks V tp < 1 μs A TC = 25 °C A TC = 100 °C A Note - 1 W TC = 25 °C °C °C Note - 1 : Pulse width limited by Tvj max. Electrical Characteristics at Tvj = 25 °C (unless otherwise specified) Parameter Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) VCE = 1200 V VGE = 0 V VCE = 0 V VGE = ± 20 V VCE = 20 V IC = 75 m A VGE = 15 V IC = 75 A Conditions Tvj = 25 °C Tvj = 175 °C Tvj = 25 °C Tvj = 125 °C Tvj = 175 °C Input Capacitance Cies...