FML20N50ES
FML20N50ES is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
0.6±0.2
Equivalent circuit schematic
9.0± 0.2
7.0± 0.2
0.4± 0.1
4 D
10.1±0.3 9.0±0.2 0.5±0.2
2.0 1.5
2.0 2.5
G 1
(10.1) (5.8)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
1 1.0±0.2 1.0±0.2
S1 2 3 S2
0.4±0.1
3.6±0.2
2.8±0.2
Solder Plating
(2.2)
(4.0)
(3.2) (0.8)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS IAR E AS E AR d V/dt -di/dt PD http://..net/
Tch Tstg VISO
Characteristics 500 500 ±20 ±80 ±30 20 582.5 9.5 4.6 100 2.16 95 150 -55 to + 150 2
(2.1)
Unit V V A A V A m J m J k V/µs A/µs W °C °C k...
