FMV07N60S1
FMV07N60S1 is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant
Applications For switching
Outline Drawings [mm]
TO-220F (SLS)
Equivalent circuit schematic
②Drain
Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS
EAS d VDS/dt d V/dt -di/dt
Maximum Power Dissipation
Tch
Operating and Storage Temperature range
Tstg
Isolation Voltage
Viso
Note
- 1 : Limited by maximum channel temperature. Note
- 2 : Tch≤150°C, See Fig.1 and Fig.2 Note
- 3 : Starting Tch=25°C, IAS=1.4A, L=190m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note
- 4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Vpeak≤BVDSS, Tch≤150°C. Note
- 5 : IF≤-ID, d V/dt=15k V/μs, VDD≤400V, Vpeak≤BVDSS, Tch≤150°C.
Characteristics
600 600 ±6.5 ±4.1 ±19.5...