FMV11N60E Datasheet | Fuji Electric

Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR d V/dt -di/dt PD Tch Tstg Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS =±30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5.5A RG =15Ω Vcc =300V I D =11A VGS =10V L=2.64m H, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=25°C Characteristics 600 600 ±11 ±44 ±30 11 384 6.5 4.9 100 2.16 65 150 -55 to + 150 min. 600 2.5 6 11 Unit V V A A V A m J m J k V/µs A/µs W °C °C typ. 3.0 10 0.641 12 1700 150 11 21 9.5 100 19 48.5 12.5 14 0.86 0.52 5.5 max. 3.5 25 250 100 0.75 2550 225 16.5 31.5 14.5 150 28.5 73 19 21 1.30 Unit V V µA n A Ω S p F Remarks VGS = -30V Note- 1 Note- 2 Note- 3 Note- 4 Note- 5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current...