• Part: FMV20N60S1
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 682.44 KB
Download FMV20N60S1 Datasheet PDF
Fuji Electric
FMV20N60S1
FMV20N60S1 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current Gate-Source Voltage Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt EAS d VDS/dt d V/dt -di/dt Maximum Power Dissipation Operating and Storage Temperature range Tch Tstg Isolation Voltage Viso Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch≤150°C, See Fig.1 and Fig.2 Note - 3 : Starting Tch=25°C, IAS=2A, L=216m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note - 5 : IF≤-ID, d V/dt=15k V/μs, VDD≤400V, Tch≤150°C. 472.2 50 15 100 2.16 53 150 -55 to +150 2 Equivalent circuit schematic ②Drain...