FMV20N60S1
FMV20N60S1 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant
Applications For switching
Outline Drawings [mm]
TO-220F(SLS)
Connection
1 Gate 2 Drain 3 Source
DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Symbol VDS VDSX ID
Pulsed Drain Current
Gate-Source Voltage
Characteristics 600 600 ±20 ±12.6 ±60 ±30
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
EAS d VDS/dt d V/dt -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Tch Tstg
Isolation Voltage
Viso
Note
- 1 : Limited by maximum channel temperature. Note
- 2 : Tch≤150°C, See Fig.1 and Fig.2 Note
- 3 : Starting Tch=25°C, IAS=2A, L=216m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note
- 4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note
- 5 : IF≤-ID, d V/dt=15k V/μs, VDD≤400V, Tch≤150°C.
472.2 50 15 100 2.16 53 150
-55 to +150 2
Equivalent circuit schematic
②Drain...