• Part: FMV20N60S1FD
  • Description: N-Channel enhancement mode power MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 726.20 KB
Download FMV20N60S1FD Datasheet PDF
Fuji Electric
FMV20N60S1FD
FMV20N60S1FD is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic ②Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt IDP VGS EAS d VDS/dt d V/dt -di/dt Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg Isolation Voltage Viso Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch ≤ 150°C, See Fig.1 and Fig.2 Note - 3 : Starting Tch=25°C, IAS=2A, L=216m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 4 : IF ≤ -ID, -di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Note - 5 : IF ≤ -ID, d V/dt=30k V/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Characteristics 600 600 ±20 ±12.6 ±60 ±30 50 30 100 2.16 53 150 -55 to +150...