FMV24N25G Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Symbol VDS VDSX ID I DP VGS IAR E AS d Vds/dt d V/dt PD Tch Tstg VISO Characteristics 250 220 ±24 ±96 ±30 24 192 20 5 2.16 65 150 -55 to +150 2 Unit V V A A V A m J k V/µs k V/µs W °C °C KVrms Remarks VGS = -30V Note- 1 Note- 2 VDS=≤200V Note- 3 Ta=25°C Tc=25°C t=60sec, f=60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=250V, VGS=0V VDS=200V, VGS=0V VGS=±30V, VDS=0V I D =12A, VGS=10V I D =12A, VDS=25V VDS=75V VGS=0V f=1MHz Vcc =72V VGS=10V I D =12A RG=10Ω Vcc =72V I D =24A VGS=10V L=560u H, Tch=25°C I F=24A, VGS=0V, Tch=25°C I F=24A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 250 3.0 8 24 typ. 10 0.11 16 1150 200 13...