• Part: FMV30N60S1
  • Description: N-Channel enhancement mode power MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 708.50 KB
Download FMV30N60S1 Datasheet PDF
Fuji Electric
FMV30N60S1
FMV30N60S1 is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic ②Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS d VDS/dt d V/dt -di/dt Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg Isolation Voltage Viso Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch≤150°C, See Fig.1 and Fig.2 Note - 3 : Starting Tch=25°C, IAS=4A, L=97.3m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note - 5 : IF≤-ID, d V/dt=12k V/μs, VDD≤400V, Tch≤150°C. Characteristics 600 600 ±30 ±19 ±90 ±30 6.6 849.2 50 12 100 2.16 90 150 -55 to +150 Electrical Characteristics at TC=25°C (unless otherwise specified) - Static Ratings Description Symbol Conditions Drain-Source Breakdown Voltage Gate Threshold...