FMV30N60S1
FMV30N60S1 is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant
Applications For switching
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
②Drain
Connection
1 Gate 2 Drain 3 Source
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS IAR EAS d VDS/dt d V/dt -di/dt
Maximum Power Dissipation
Tch Operating and Storage Temperature range
Tstg
Isolation Voltage
Viso
Note
- 1 : Limited by maximum channel temperature. Note
- 2 : Tch≤150°C, See Fig.1 and Fig.2 Note
- 3 : Starting Tch=25°C, IAS=4A, L=97.3m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note
- 4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note
- 5 : IF≤-ID, d V/dt=12k V/μs, VDD≤400V, Tch≤150°C.
Characteristics
600 600 ±30 ±19 ±90 ±30 6.6 849.2 50 12 100 2.16 90 150 -55 to +150
Electrical Characteristics at TC=25°C (unless otherwise specified)
- Static Ratings
Description
Symbol Conditions
Drain-Source Breakdown Voltage Gate Threshold...