FMW20N60S1HF Datasheet | Fuji Electric

Features Low on-state resistance Low switching loss easy to use (more controllabe switching d V/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic Applications UPS Server Tele Power conditioner system Power supply Gate(G) Drain(D) Source(S) CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch ≤150°C, See Fig.1 and Fig.2 Note - 3 : Starting Tch =25°C, IAS=2A, L=216m H, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note - 4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Tch ≤150°C. Note - 5 : I F ≤-I D, d V/dt=15k V/μs, VDD ≤400V, Tch ≤150°C. Symbol VDS VDSX ID IDP VGS IAR EAS d VDS /dt d V/dt -di/dt PD Tch Tstg Characteristics 600 600 ±20 ±12.6 ±60 ±30 6.6 472.2 50 15 100 2.5 140 150 -55 to +150 Unit V V A A A V A m J k V/μs k V/μs A/μs W °C °C Remarks VGS=-30V Tc=25°C Tc=100°C Note- 1 Note- 1 Note - 2 Note - 3 VDS ≤ 600V Note - 4 Note - 5 Ta =25°C Tc=25°C Datasheet pdf - http://..net/ .Data Sheet.co.kr Electrical Characteristics at TC =25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Conditions ID =250μA VGS=0V ID =250μA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS= ± 30V VDS=0V ID =10A VGS=10V f=1MHz, open drain ID =10A VDS=25V VDS=10V VGS=0V f=1MHz VGS=0V VDS=0…480V VGS=0V VDS=0…480V ID=constant VDD =400V, VGS=10V ID =10A, RG...