• Part: FMW47N60S1HF
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 693.70 KB
Download FMW47N60S1HF Datasheet PDF
Fuji Electric
FMW47N60S1HF
FMW47N60S1HF is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound Applications For switching Outline Drawings [mm] TO-247 ᶃᶄ ᶅ ᶃᶄ ᶅ CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt IDP VGS EAS d VDS/dt d V/dt -di/dt Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch≤150°C, See Fig.1 and Fig.2 Note - 3 : Starting Tch=25°C, IAS=7.6A, L=40.2m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 4 : IF≤23.5A, -di/dt=80A/μs, VDD≤300V, Tch≤150°C. Note - 5 : IF≤23.5A, d V/dt=13k V/μs, VDD≤300V, Tch≤150°C. Characteristics 600 600 ±47 ±29.7 ±141 ±30 50 13 80 2.5 390 150 -55 to +150 Electrical Characteristics at TC=25°C (unless otherwise...