FMW47N60S1HF
FMW47N60S1HF is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound
Applications For switching
Outline Drawings [mm]
TO-247
ᶃᶄ ᶅ
ᶃᶄ ᶅ
CONNECTION ① GATE ② DRAIN ③ SOURCE
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Parameter Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS
EAS d VDS/dt d V/dt -di/dt
Maximum Power Dissipation
Tch
Operating and Storage Temperature range
Tstg
Note
- 1 : Limited by maximum channel temperature. Note
- 2 : Tch≤150°C, See Fig.1 and Fig.2 Note
- 3 : Starting Tch=25°C, IAS=7.6A, L=40.2m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note
- 4 : IF≤23.5A, -di/dt=80A/μs, VDD≤300V, Tch≤150°C. Note
- 5 : IF≤23.5A, d V/dt=13k V/μs, VDD≤300V, Tch≤150°C.
Characteristics
600 600 ±47 ±29.7 ±141 ±30
50 13 80 2.5 390 150 -55 to +150
Electrical Characteristics at TC=25°C (unless otherwise...