K2003 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage .. VGS=±30V Guarantee Avalanche-proof FUJI POWER MOSFET FAP-IIA SERIES Outline Drawings TO-220F15 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 600 4 16 4 ±30 40 +150 -55 to +150 Unit V A A A V W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=600V VGS=0V VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=10 Ω ID=4A VGS=10V L=100µH Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C Min. 600 2.5 Tch=25°C Tch=125°C Typ. 3.0 10 0.2 10 2.0 4 1000 85 20 20 15 45 15 1.1 400 2 Max. 3.5 500 1.0 100 2.4 1500 130 30 30 25 70 25 1.65 Units V V µA m A n A Ω S p F 2 ns A V ns µC Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 62.5 3.125 Units °C/W...