K2642-01MR Datasheet | Fuji Electric

Features High speed switching Low on-resistance .. No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV - 1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.7 50 +150 -55 to +150 Unit V A A V m J W °C °C Gate(G) Source(S) - 1 L=0.72m H, Vcc=50V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=500V VGS=0V VGS=±35V VDS=0V ID=7.5A VGS=10V ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=15A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=2x ID VGS=0V Tch=25°C IF=ID VGS=0V -di/dt=100A/µs Tch=25°C 15 1.1 500 8.0 1.65 Tch=25°C Tch=125°C Min. 500 3.5 Typ. Max. Units V V µA m A n A Ω S p F 4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.50 62.5 Units °C/W °C/W FUJI POWER MOSFET Characteristics Typical output characteristics ID=f(VDS):80µs pulse...