K2806-01 Datasheet | Fuji Electric

Features .. High Current N-channel MOS-FET 30V 0,02Ω 35A 30W > Outline Drawing Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 35 140 ±16 129,3 30 150 -55 ~ +150 - L=0,07m H, VCC=12V > Equivalent Circuit Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=17,5A VGS=4V VGS=10V ID=17,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=35A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=2x IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 30 1,0 Typ. 1,5 10 0,2 10 0,022 0,014 33 1100 550 240 9 15 75 50 0,98 50 0,08 Max. 2,0 500 1,0 100 0,03 0,02 1650 830 360 15 23 115 75 1,71 Unit V V µA m A n A Ω Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 4,16 Unit °C/W °C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX -...