• Part: K2900-01
  • Description: N-channel MOS-FET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 243.37 KB
Download K2900-01 Datasheet PDF
Fuji Electric
K2900-01
K2900-01 is N-channel MOS-FET manufactured by Fuji Electric.
Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range V DS ID I D(puls) V GS E AV PD T ch T stg 60 ±45 ±180 ±30 461.9 60 150 -55 ~ +150 - L=0,304m H, VCC=24V Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Drain-Source Breakdown-Voltage BV DSS ID=1m A VGS=0V Gate Threshhold Voltage V GS(th) ID=10m A VDS=VGS Zero Gate Voltage Drain Current I...