K3502-01MR
K3502-01MR is 2SK3502-01MR manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 600 A ±12 A ±48 V ±30 A 12 m J 183 k V/µs 20 k V/µs 5 2.16 W 70 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO
- 5 2 k Vrms
- 1 L=2.33m H, Vcc=60V, See to Avalanche Energy Graph
- 2 Tch < 150°C =
- 3 IF < = BVDSS, Tch < = 150°C
- 4 VDS < = 600V
- 5 t=60sec, f=60Hz = -ID, -di/dt=50A/µs, Vcc < Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge .. Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID=1m A ID= 250µA VDS=VGS Tch=25°C VDS=600V VGS=0V Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Ω V CC=250V ID=10A VGS=10V L=2.33m H Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
600...