K3686-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-source voltage ±30 A Repetitive or non-repetitive 16 m J Maximum avalanche energy 242.7 k V/μ s Maximum drain-source d V/dt 20 k V/μ s Peak diode recovery d V/dt 5 Max. power dissipation 2.02 W 270 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C - 1 L=1.74m H, Vcc=60V, See to Avalanche Energy Graph - 2 Tch< =150°C < 600V - 5 VGS=-30V - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS = = -ID, -di/dt=50A/μs, Vcc < Item Drain-source voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.74m H Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/μs Tch=25°C 600...