K4005-01MR Datasheet | Fuji Electric

Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID IDP VGS IAR EAS EAR d VDS/dt d V/dt PD Tch Tstg VISO Characteristics 900 900 6.0 ± 24.0 ± 30 6.0 487 7.0 40 5 70 W 2.16 150 -55 to +150 2  C  C k Vrms t=60sec f=60Hz Unit V V A A V A m J m J Note - 1 Note - 2 Note - 3 900V VGS=-30V Remarks This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. k V/μ s VDS k V/μ s Note - 4 Tc=25°C Ta=25°C 6.Electrical Characteristics at Tc=25  C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) Symbol Conditions ID= 2 5 0 μ A VGS=0V ID= 2 5 0 μ A VDS=VGS VDS=900V Tch=25°C VGS=0V VDS=720V Tch=125°C VGS=0V VGS= ± 30V VDS=0V ID=3A VGS=10V DWG.NO. min. typ. max. Unit 900 2.5 - - 3.5 25 V V μ A - - 100 n...