K724 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 500 10 40 10 ±20 100 +150 -55 to +150 Unit V A A A V W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Switching time (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss ton td(off) tf V SD trr Test Conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS=500V VGS=0V Tch=25°C VGS=±20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=50 Ω ID=2.8A VGS=10V IF=2x IDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C Min. 500 2.1 Typ. Max. 4.0 500 100 0.67 2400 300 120 195 430 140 1.7 Units V V µA n A Ω S p F 3.0 10 10 0.5 6.0 10.0 1600 200 80 130 330 110 1.1 500 ns V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 35 1.25 Units °C/W °C/W FUJI POWER MOSFET Characteristics Typical output characteristics 20 1.5 15 2SK724 On state resistance vs. Tch ID 10...