KS823C09
KS823C09 is SCHOTTKY BARRIER DIODE manufactured by Fuji Electric.
Features
Surface mount device Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
1. Gate 2, 4. Drain 3. Source
Connection diagram
Applications
High speed power switching
1 2 4 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=100°C Sine wave 10ms Conditions Rating 90 90 5.0- 60 -40 to +150 -40 to +150 Unit V V A A °C °C
- Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.5A VR=VRRM Junction to case Max. 0.9 5.0 10 Unit V m A °C/W
2.5 ±0.5
(90V / 5A )
Characteristics
Forward Characteristic (typ.)
100 10
KS823C04 (5A)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
Forward Current (A)
Reverse Current (m A)
Tj=100°C 10
Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1
-1
Tj= 25°C
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1...
