MS5F6040 Datasheet | Fuji Electric

.. SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 1MBI600U4-120 MS5F 6040 Feb. 15 ’05 Feb. 15 ’05 S.Miyashita T.Miyasaka Y.Seki K.Yamada H04-004-07b R e v i s e d Date Classification Ind. Content R e c o r d s Applied date Issued date Drawn Checked Checked Approved Feb.-15 - ’05 Enactment T.Miyasaka K.Yamada Y.Seki 2 13 H04-004-06b 1MBI600U4-120 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit 3 13 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25 C o Tc=80 C o Tc=25 C o Tc=80 C o o Conditions 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (- 1) Viso AC : 1min. voltage Mounting (- 2) Screw Terminals (- 3) Torque Terminals (- 4) (- 1) All terminals should be connected together when isolation test will be done. (- 2) Remendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) (- 3) Remendable Value : Terminals 3.5 to 4.5 Nm (M6) (- 4) Remendable Value : Terminals 1.3 to 1.7 Nm (M4) o Maximum Units Ratings 1200 V ±20 V 800 600 1600 A 1200 600 1200 2905 W +150 o C -40 to +125 2500 3.5 4.5 1.7 VAC Nm 4. Electrical characteristics ( at Tj= 25 C unless otherwise specified ) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Conditions VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=600m A Ic=600A VGE=15V min. 4.5 o Characteristics typ. max. 6.5 2.15 2.35 1.90 2.10 67 0.32 0.10 0.03 0.41 0.07 1.90 2.00 1.65 1.75 0.40 4.0 800 8.5 2.30 2.05 1.20 0.60 1.00 0.30 2.05 1.80 0.35 - Units m A n A V Tj=25 C o Tj=125 C o...