TP858C12R
TP858C12R is Schottky Barrier Diode manufactured by Fuji Electric.
http://.fujisemi.
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item Repetitive peak reverse voltage Average output current Non-repetitive forward surge current-
- Operating junction temperature Storage temperature
Note- Out put current of center tap full wave connection. Note-
- Rating per element
FUJI Diode
Symbols VRRM Io IFSM Tj Tstg
Conditions 50Hz square wave duty =1/2 Tc =106˚C Sine wave, 10ms 1shot
- Ratings 120 30- 110 150 -40 to +150
Units V A A ˚C ˚C
Electrical characteristics
Item Forward voltage-
- - Reverse current-
- - Thermal resistance
Note-
- - Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols VF IR Rth(j-c) IF = 15 A VR =VRRM Junction to case Conditions Maximum 1.01 200 1.25 Units V µA ˚C/W
Mechanical characteristics
Item Approximate mass Conditions Maximum 1.6 Units g
Free Datasheet http://../
Outline Drawings [mm] http://.fujisemi.
FUJI Diode
TP858C12R http://.fujisemi.
FUJI Diode
Forward Characteristic
(typ.)
Reverse Characteristic
(typ.)
Tj=150℃
Tj=125℃
Tj=100℃...