• Part: TP858C12R
  • Description: Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Fuji Electric
  • Size: 659.01 KB
Download TP858C12R Datasheet PDF
Fuji Electric
TP858C12R
TP858C12R is Schottky Barrier Diode manufactured by Fuji Electric.
http://.fujisemi. Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Repetitive peak reverse voltage Average output current Non-repetitive forward surge current- - Operating junction temperature Storage temperature Note- Out put current of center tap full wave connection. Note- - Rating per element FUJI Diode Symbols VRRM Io IFSM Tj Tstg Conditions 50Hz square wave duty =1/2 Tc =106˚C Sine wave, 10ms 1shot - Ratings 120 30- 110 150 -40 to +150 Units V A A ˚C ˚C Electrical characteristics Item Forward voltage- - - Reverse current- - - Thermal resistance Note- - - Rating per element (at Ta=25˚C unless otherwise specified.) Symbols VF IR Rth(j-c) IF = 15 A VR =VRRM Junction to case Conditions Maximum 1.01 200 1.25 Units V µA ˚C/W Mechanical characteristics Item Approximate mass Conditions Maximum 1.6 Units g Free Datasheet http://../ Outline Drawings [mm] http://.fujisemi. FUJI Diode TP858C12R http://.fujisemi. FUJI Diode Forward Characteristic (typ.) Reverse Characteristic (typ.) Tj=150℃ Tj=125℃ Tj=100℃...