YG808C10R
YG808C10R is SCHOTTKY BARRIER DIODE manufactured by Fuji Electric.
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.7±0.2 2.54±0.2
0.6 -0
+0.2
2.7±0.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=80°C Square wave Sine wave 10ms Conditions
Rating 100 100 1500 30- 180 +150 -40 to +150
Unit V V V A A °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop
- - Reverse current
- - Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=VRRM Junction to case
- Out put current of centertap full wave connection.
Max. 0.80 20.0 2.0 Unit V m A °C/W
- - Rating per element
Mechanical Characteristics
Mounting torque Weight Remended torque 0.3 to 0.5 2.3 N- m g
(100V / 30A TO-22OF15)
Characteristics
Forward Characteristic
(typ.)
Reverse Characteristic (typ.)
Tj=150 C o
Forward Current
Tj=150 C Tj=125 C Tj=100 C Tj=25 C o o o o
(m...
