YG835C03R
YG835C03R is SCHOTTKY BARRIER DIODE manufactured by Fuji Electric.
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.7±0.2 2.54±0.2
+0.2 -0
2.7±0.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=99°C Square wave Sine wave 10ms Conditions
Rating 30 30 1500 25- 120 +150 -40 to +150
Unit V V V A A °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop
- - Reverse current
- - Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=6.0A VR=VRRM Junction to case
- Out put current of centertap full wave connection.
Max. 0.45 15.0 2.5 Unit V m A °C/W
- - Rating per element
Mechanical Characteristics
Mounting torque Weight Remended torque 0.3 to 0.5 2.0 N- m g
A-456
(30V / 25A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100 10
Reverse Characteristic (typ.)
Tj=150°C 10 10
Tj=125°C
Reverse Current (m A)
Forward Current...
