• Part: YG862C12R
  • Description: High Voltage Schottky barrier diode
  • Category: Diode
  • Manufacturer: Fuji Electric
  • Size: 74.23 KB
Download YG862C12R Datasheet PDF
Fuji Electric
YG862C12R
YG862C12R is High Voltage Schottky barrier diode manufactured by Fuji Electric.
Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current - - Operating junction temperature Storage temperature Symbol VRSM VRRM Viso Io IFSM Tj Tstg Terminals-to-Case, AC.1min Square wave, duty=1/2 Tc=122°C Sine wave 10ms 1shot Conditions tw=500ns, duty=1/40 1 2 3 Rating 120 120 1500 10 - 75 +150 -40 to +150 Unit V V V A A °C °C - Out put current of center tap full wave connection - - Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.88 150 3.0 Unit V µA °C/W Mechanical characteristics .. Mounting torque Approximate mass Remended torque 0.3 to 0.5 2 N- m g (120V / 10A ) Characteristics Forward Characteristic (typ.) YG862C12R (10A) Reverse Characteristic (typ.) Tj=150°C Tj=125°C I F Forward Current (A) I R Reverse Current (m A) Tj=100°C Tj=150°C Tj=125°C Tj=100°C...